Japanese company Unisantis, founded in 2004 to develop and commercialize a new type of transistor, has announced a 24-month collaborative research agreement with Sinapore’s Institute of Microelectronics (IME) to work on the device. Unisantis is making some huge claims about this new transistor, a three-dimensional design called the Stacked Gate Transistor (SGT) that the company claims could boost processor clockspeeds north of 20GHz to a possible 50GHz.
I’m not enough of a semiconductor device physics guy to be able to give the level of scrutiny that I’d like to the 20GHz+ claims, but it is clear that man behind the SGT, Fujio Masuoka, is a heavyweight in the semiconductor memory world. Indeed, most of the journal articles that I was able to dig up on the SGT were related to the device’s potential for the flash storage market, where its 3D structure—source, gate, and drain are arranged vertically, instead of spread out horizontally—makes for a fast, high-density nonvolatile memory cell. (story)
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